New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.

T. Homma, K. Eguchi, Y. Numasawa, T. Kikkawa, Y. Hokari, K. Hamano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A polyimide siloxane film involving Si-phenyl bonds, which are designed to have chemical bonds with imide structure and to form three-dimensional Si-O networks, has been developed. The film has advantageous features such as high heat-resistance, low thermal expansion ratio at high temperatures, good adhesive properties, low leakage current at the high-temperature range of 150-250°C, and excellent planarization characteristics. The film has been applied to interlayer dielectrics of CMOS devices passivated by 1.0-μm-thick plasma CVD SiN film in order to examine reliability for a plastic packaging. The degradation of device characteristics was not observed after B-T stress and pressure-cooker tests.

Original languageEnglish
Title of host publication1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages279-285
Number of pages7
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Polyimides
Plasma CVD
Chemical bonds
Heat resistance
Leakage currents
Thermal expansion
Adhesives
Packaging
Plastics
Degradation
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Homma, T., Eguchi, K., Numasawa, Y., Kikkawa, T., Hokari, Y., & Hamano, K. (1988). New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection. In 1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf (pp. 279-285). Piscataway, NJ, United States: Publ by IEEE.

New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection. / Homma, T.; Eguchi, K.; Numasawa, Y.; Kikkawa, T.; Hokari, Y.; Hamano, K.

1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf. Piscataway, NJ, United States : Publ by IEEE, 1988. p. 279-285.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Homma, T, Eguchi, K, Numasawa, Y, Kikkawa, T, Hokari, Y & Hamano, K 1988, New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection. in 1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf. Publ by IEEE, Piscataway, NJ, United States, pp. 279-285.
Homma T, Eguchi K, Numasawa Y, Kikkawa T, Hokari Y, Hamano K. New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection. In 1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf. Piscataway, NJ, United States: Publ by IEEE. 1988. p. 279-285
Homma, T. ; Eguchi, K. ; Numasawa, Y. ; Kikkawa, T. ; Hokari, Y. ; Hamano, K. / New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection. 1988 Proc Fifth Int IEEE VLSI Multilevel Interconnect Conf. Piscataway, NJ, United States : Publ by IEEE, 1988. pp. 279-285
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