New polyimide siloxane film for interlayer dielectrics in sub-micron multilevel interconnection.

T. Homma, K. Eguchi, Y. Numasawa, T. Kikkawa, Y. Hokari, K. Hamano

Research output: Contribution to conferencePaperpeer-review

6 Citations (Scopus)

Abstract

A polyimide siloxane film involving Si-phenyl bonds, which are designed to have chemical bonds with imide structure and to form three-dimensional Si-O networks, has been developed. The film has advantageous features such as high heat-resistance, low thermal expansion ratio at high temperatures, good adhesive properties, low leakage current at the high-temperature range of 150-250°C, and excellent planarization characteristics. The film has been applied to interlayer dielectrics of CMOS devices passivated by 1.0-μm-thick plasma CVD SiN film in order to examine reliability for a plastic packaging. The degradation of device characteristics was not observed after B-T stress and pressure-cooker tests.

Original languageEnglish
Pages279-285
Number of pages7
Publication statusPublished - 1988

ASJC Scopus subject areas

  • Engineering(all)

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