New two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and 'Cu in low ε, organic film'-metallizations

Y. Hayashi, T. Onodera, T. Nakajima, K. Kikuta, Y. Tsuchiya, J. Kawahara, S. Takahashi, Kazuyoshi Ueno, S. Chikaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1μm-pitch Al-interconnect to 90% in 6' wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobuten (BCB) interconnects are successfully obtained.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherIEEE
Pages88-89
Number of pages2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

Other

OtherProceedings of the 1996 Symposium on VLSI Technology
CityHonolulu, HI, USA
Period96/6/1196/6/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hayashi, Y., Onodera, T., Nakajima, T., Kikuta, K., Tsuchiya, Y., Kawahara, J., ... Chikaki, S. (1996). New two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and 'Cu in low ε, organic film'-metallizations. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 88-89). IEEE.