TY - JOUR
T1 - New two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and 'Cu in low ε, organic film'-metallizations
AU - Hayashi, Y.
AU - Onodera, T.
AU - Nakajima, T.
AU - Kikuta, K.
AU - Tsuchiya, Y.
AU - Kawahara, J.
AU - Takahashi, S.
AU - Ueno, K.
AU - Chikaki, S.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1μm-pitch Al-interconnect to 90% in 6' wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobuten (BCB) interconnects are successfully obtained.
AB - A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1μm-pitch Al-interconnect to 90% in 6' wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobuten (BCB) interconnects are successfully obtained.
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M3 - Conference article
AN - SCOPUS:0029703058
SN - 0743-1562
SP - 88
EP - 89
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - Proceedings of the 1996 Symposium on VLSI Technology
Y2 - 11 June 1996 through 13 June 1996
ER -