New two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and 'Cu in low ε, organic film'-metallizations

Y. Hayashi, T. Onodera, T. Nakajima, K. Kikuta, Y. Tsuchiya, J. Kawahara, S. Takahashi, K. Ueno, S. Chikaki

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1μm-pitch Al-interconnect to 90% in 6' wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobuten (BCB) interconnects are successfully obtained.

Original languageEnglish
Pages (from-to)88-89
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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