Non-Markoffian theory of electron spin decoherence in a single quantum dot

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate theoretically the electron spin relaxation and decoherence rates in a single quantum disk and clarify their dependence on the magnetic field strength, the temperature and the strength of quantum confinement. In the weak confinement regime, the spin relaxation rate at low temperatures is dominated by the two-phonon processes and its dependence on the magnetic field is rather weak. In the strong confinement regime, on the other hand, the spin relaxation rate at low temperatures is governed by the one-phonon processes and exhibits the characteristic B4 dependence on the magnetic field (B). Non-Markoffian theory is developed for the electron spin decoherence rate due to the electron-phonon interactions based on the double Feynman diagrams. The dependencies of the electron spin decoherence rate on the magnetic field and the temperature are clarified.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1333-1334
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

    Fingerprint

Keywords

  • Electron spin decoherence
  • Electron spin relaxation
  • Electron-phonon interactions
  • Quantum disk

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Takagahara, T. (2007). Non-Markoffian theory of electron spin decoherence in a single quantum dot. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1333-1334). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730395