Nonreciprocal TE-TM mode converter with semiconductor guiding layer

H. Yokoi, T. Mizumoto, H. Iwasaki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.

Original languageEnglish
Pages (from-to)1670-1672
Number of pages3
JournalElectronics Letters
Volume38
Issue number25
DOIs
Publication statusPublished - 2002 Dec 5
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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