Nonreciprocal TE-TM mode converter with semiconductor guiding layer

Hideki Yokoi, T. Mizumoto, H. Iwasaki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.

Original languageEnglish
Pages (from-to)1670-1672
Number of pages3
JournalElectronics Letters
Volume38
Issue number25
DOIs
Publication statusPublished - 2002 Dec 5
Externally publishedYes

Fingerprint

Semiconductor materials
Garnets
Air
Waveguides
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nonreciprocal TE-TM mode converter with semiconductor guiding layer. / Yokoi, Hideki; Mizumoto, T.; Iwasaki, H.

In: Electronics Letters, Vol. 38, No. 25, 05.12.2002, p. 1670-1672.

Research output: Contribution to journalArticle

Yokoi, Hideki ; Mizumoto, T. ; Iwasaki, H. / Nonreciprocal TE-TM mode converter with semiconductor guiding layer. In: Electronics Letters. 2002 ; Vol. 38, No. 25. pp. 1670-1672.
@article{5684ceba1c5d48e39bc37c0737680b77,
title = "Nonreciprocal TE-TM mode converter with semiconductor guiding layer",
abstract = "A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.",
author = "Hideki Yokoi and T. Mizumoto and H. Iwasaki",
year = "2002",
month = "12",
day = "5",
doi = "10.1049/el:20021035",
language = "English",
volume = "38",
pages = "1670--1672",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "25",

}

TY - JOUR

T1 - Nonreciprocal TE-TM mode converter with semiconductor guiding layer

AU - Yokoi, Hideki

AU - Mizumoto, T.

AU - Iwasaki, H.

PY - 2002/12/5

Y1 - 2002/12/5

N2 - A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.

AB - A nonreciprocal TE-TM mode converter with a semiconductor guiding layer was studied. The mode converter comprised a magnetic garnet/GaInAsP/InP (AlInAs-oxide, air) waveguide. When the lower cladding layer was air, the propagation distance required for a 45° mode conversion was estimated to be several hundreds of microns at 1.55 μm.

UR - http://www.scopus.com/inward/record.url?scp=0037028286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037028286&partnerID=8YFLogxK

U2 - 10.1049/el:20021035

DO - 10.1049/el:20021035

M3 - Article

VL - 38

SP - 1670

EP - 1672

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25

ER -