Novel crystallization process for germanium thin films: Surfactant-crystallization method

Hiroyuki Miura, Masao Kamiko, Kentaro Kyuno

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.

Original languageEnglish
Article number010204
JournalJapanese Journal of Applied Physics
Volume52
Issue number1
DOIs
Publication statusPublished - 2013 Jan

Fingerprint

Germanium
germanium
Surface active agents
Crystallization
surfactants
crystallization
Thin films
Substrates
thin films
Crystalline materials
Heating
Crystals
heating
crystals
Temperature
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Novel crystallization process for germanium thin films : Surfactant-crystallization method. / Miura, Hiroyuki; Kamiko, Masao; Kyuno, Kentaro.

In: Japanese Journal of Applied Physics, Vol. 52, No. 1, 010204, 01.2013.

Research output: Contribution to journalArticle

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