NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS.

M. Madihian, Shinichi Tanaka, N. Hayama, A. Okamoto, K. Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The design consideration, fabrication process, and performances of small-scale integrated (SSI) logic circuits implemented using recently developed self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. The logic circuits include an inverter, OR/NOR, NAND/OR, exclusive-OR/NOR, and flip-flops constructed using current-mode logic (CML) gates. Each IC consumes about 30 mW of dc power for a successful operation with a chip yield higher than 50%. Preliminary experimental results with input frequencies higher than 1 GHz indicate capability of these circuits for GHz class operation. SPICE-F simulation shows potential for proper operation with clock/input frequencies exceeding 4 GHz.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationNew York, NY, USA
PublisherIEEE
Pages113-116
Number of pages4
Publication statusPublished - 1987
Externally publishedYes

Fingerprint

Logic circuits
Heterojunction bipolar transistors
Electrodes
Logic gates
Flip flop circuits
SPICE
Integrated circuits
Clocks
Fabrication
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Madihian, M., Tanaka, S., Hayama, N., Okamoto, A., & Honjo, K. (1987). NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 113-116). New York, NY, USA: IEEE.

NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS. / Madihian, M.; Tanaka, Shinichi; Hayama, N.; Okamoto, A.; Honjo, K.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1987. p. 113-116.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Madihian, M, Tanaka, S, Hayama, N, Okamoto, A & Honjo, K 1987, NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). IEEE, New York, NY, USA, pp. 113-116.
Madihian M, Tanaka S, Hayama N, Okamoto A, Honjo K. NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA: IEEE. 1987. p. 113-116
Madihian, M. ; Tanaka, Shinichi ; Hayama, N. ; Okamoto, A. ; Honjo, K. / NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). New York, NY, USA : IEEE, 1987. pp. 113-116
@inproceedings{f6cee8d7fdb241c7b71765718d3176d1,
title = "NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS.",
abstract = "The design consideration, fabrication process, and performances of small-scale integrated (SSI) logic circuits implemented using recently developed self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. The logic circuits include an inverter, OR/NOR, NAND/OR, exclusive-OR/NOR, and flip-flops constructed using current-mode logic (CML) gates. Each IC consumes about 30 mW of dc power for a successful operation with a chip yield higher than 50{\%}. Preliminary experimental results with input frequencies higher than 1 GHz indicate capability of these circuits for GHz class operation. SPICE-F simulation shows potential for proper operation with clock/input frequencies exceeding 4 GHz.",
author = "M. Madihian and Shinichi Tanaka and N. Hayama and A. Okamoto and K. Honjo",
year = "1987",
language = "English",
pages = "113--116",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "IEEE",

}

TY - GEN

T1 - NOVEL FULLY SELF-ALIGNED CLOSELY-SPACED-ELECTRODE HBT FOR SSI LOGIC FAMILY APPLICATIONS.

AU - Madihian, M.

AU - Tanaka, Shinichi

AU - Hayama, N.

AU - Okamoto, A.

AU - Honjo, K.

PY - 1987

Y1 - 1987

N2 - The design consideration, fabrication process, and performances of small-scale integrated (SSI) logic circuits implemented using recently developed self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. The logic circuits include an inverter, OR/NOR, NAND/OR, exclusive-OR/NOR, and flip-flops constructed using current-mode logic (CML) gates. Each IC consumes about 30 mW of dc power for a successful operation with a chip yield higher than 50%. Preliminary experimental results with input frequencies higher than 1 GHz indicate capability of these circuits for GHz class operation. SPICE-F simulation shows potential for proper operation with clock/input frequencies exceeding 4 GHz.

AB - The design consideration, fabrication process, and performances of small-scale integrated (SSI) logic circuits implemented using recently developed self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. The logic circuits include an inverter, OR/NOR, NAND/OR, exclusive-OR/NOR, and flip-flops constructed using current-mode logic (CML) gates. Each IC consumes about 30 mW of dc power for a successful operation with a chip yield higher than 50%. Preliminary experimental results with input frequencies higher than 1 GHz indicate capability of these circuits for GHz class operation. SPICE-F simulation shows potential for proper operation with clock/input frequencies exceeding 4 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0023531838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023531838&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023531838

SP - 113

EP - 116

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - IEEE

CY - New York, NY, USA

ER -