Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Tadashi Maeda, Keiichi Numata, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida, Yasuo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
PublisherPubl by IEEE
Pages75-78
Number of pages4
ISBN (Print)0780313933
Publication statusPublished - 1993 Dec 1
EventProceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA
Duration: 1993 Oct 101993 Oct 13

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

OtherProceedings of the 15th Annual IEEE GaAs IC Symposium
CitySan Jose, CA, USA
Period93/10/1093/10/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H., & Ohno, Y. (1993). Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 75-78). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.