Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Tadashi Maeda, Keiichi Numata, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida, Yasuo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Editors Anon
PublisherPubl by IEEE
Pages75-78
Number of pages4
ISBN (Print)0780313933
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA
Duration: 1993 Oct 101993 Oct 13

Other

OtherProceedings of the 15th Annual IEEE GaAs IC Symposium
CitySan Jose, CA, USA
Period93/10/1093/10/13

Fingerprint

Flip flop circuits
Field effect transistors
Heterojunctions
Electric potential
Electric power utilization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H., & Ohno, Y. (1993). Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. In Anon (Ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 75-78). Publ by IEEE.

Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. / Maeda, Tadashi; Numata, Keiichi; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru; Ohno, Yasuo.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). ed. / Anon. Publ by IEEE, 1993. p. 75-78.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maeda, T, Numata, K, Tokushima, M, Ishikawa, M, Fukaishi, M, Hida, H & Ohno, Y 1993, Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. in Anon (ed.), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, pp. 75-78, Proceedings of the 15th Annual IEEE GaAs IC Symposium, San Jose, CA, USA, 93/10/10.
Maeda T, Numata K, Tokushima M, Ishikawa M, Fukaishi M, Hida H et al. Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. In Anon, editor, Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE. 1993. p. 75-78
Maeda, Tadashi ; Numata, Keiichi ; Tokushima, Masatoshi ; Ishikawa, Masaoki ; Fukaishi, Muneo ; Hida, Hikaru ; Ohno, Yasuo. / Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). editor / Anon. Publ by IEEE, 1993. pp. 75-78
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