Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

K. Kawamoto, Y. Saito, M. Kenmoku, K. Ueno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.

LanguageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages252-254
Number of pages3
ISBN (Electronic)9781509046591
DOIs
StatePublished - 2017 Jun 13
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 2017 Feb 282017 Mar 2

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period17/2/2817/3/2

Fingerprint

Passivation
Graphene
Multilayers
Molybdenum oxide
Molybdenum
Raman spectroscopy
Doping (additives)
Air
Temperature

Keywords

  • doping
  • graphene
  • interconnect

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kawamoto, K., Saito, Y., Kenmoku, M., & Ueno, K. (2017). Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 252-254). [7947586] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/EDTM.2017.7947586

Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects. / Kawamoto, K.; Saito, Y.; Kenmoku, M.; Ueno, K.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 252-254 7947586.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawamoto, K, Saito, Y, Kenmoku, M & Ueno, K 2017, Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947586, Institute of Electrical and Electronics Engineers Inc., pp. 252-254, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. DOI: 10.1109/EDTM.2017.7947586
Kawamoto K, Saito Y, Kenmoku M, Ueno K. Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc.2017. p. 252-254. 7947586. Available from, DOI: 10.1109/EDTM.2017.7947586
Kawamoto, K. ; Saito, Y. ; Kenmoku, M. ; Ueno, K./ Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 252-254
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