Novel interconnection technology for three-dimensional MMICs

Makoto Hirano, Suehiro Sugitani, Shinji Aoyama, Kiyomitsu Onodera

Research output: Contribution to journalArticle

Abstract

A novel fabrication technology has been developed to implement three-dimensional MMICs. This technology enables us to form a three-dimensional structure of interconnections in a 10-μm-thick polyimide insulator matrix ; for example, four horizontal metal layers, pillar-like vertical vias, and wall-like vertical microwires for shielding as a ground plane. Many passive elements and circuits can be formed in a small area in multiple levels with vertical structures, not only on GaAs IC chips but also on Si IC chips. Si masterslice MMIC, which are a typical example of three-dimensional MMICs, can be fabricated using this technology.

Original languageEnglish
Pages (from-to)1277-1283
Number of pages7
JournalNTT R and D
Volume45
Issue number12
Publication statusPublished - 1996
Externally publishedYes

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Monolithic microwave integrated circuits
Polyimides
Shielding
Fabrication
Networks (circuits)
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hirano, M., Sugitani, S., Aoyama, S., & Onodera, K. (1996). Novel interconnection technology for three-dimensional MMICs. NTT R and D, 45(12), 1277-1283.

Novel interconnection technology for three-dimensional MMICs. / Hirano, Makoto; Sugitani, Suehiro; Aoyama, Shinji; Onodera, Kiyomitsu.

In: NTT R and D, Vol. 45, No. 12, 1996, p. 1277-1283.

Research output: Contribution to journalArticle

Hirano, M, Sugitani, S, Aoyama, S & Onodera, K 1996, 'Novel interconnection technology for three-dimensional MMICs', NTT R and D, vol. 45, no. 12, pp. 1277-1283.
Hirano M, Sugitani S, Aoyama S, Onodera K. Novel interconnection technology for three-dimensional MMICs. NTT R and D. 1996;45(12):1277-1283.
Hirano, Makoto ; Sugitani, Suehiro ; Aoyama, Shinji ; Onodera, Kiyomitsu. / Novel interconnection technology for three-dimensional MMICs. In: NTT R and D. 1996 ; Vol. 45, No. 12. pp. 1277-1283.
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