Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

S. Tanaka; M. Madihian; H. Toyoshima; N. Hayama; K. Honjo

doi:10.1049/el:19870403

Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

S. Tanaka, M. Madihian, H. Toyoshima, N. Hayama, K. Honjo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

Original language	English
Pages (from-to)	562-564
Number of pages	3
Journal	Electronics Letters
Volume	23
Issue number	11
DOIs	https://doi.org/10.1049/el:19870403
Publication status	Published - 1987 Jan 1
Externally published	Yes

Keywords

Bipolar transistors
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19870403

Cite this

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title = "Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method",

abstract = "A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.",

keywords = "Bipolar transistors, Semiconductor devices and materials",

author = "S. Tanaka and M. Madihian and H. Toyoshima and N. Hayama and K. Honjo",

year = "1987",

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doi = "10.1049/el:19870403",

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AU - Tanaka, S.

AU - Madihian, M.

AU - Toyoshima, H.

AU - Hayama, N.

AU - Honjo, K.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

AB - A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

KW - Bipolar transistors

KW - Semiconductor devices and materials

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IS - 11

ER -

Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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