Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

S. Tanaka, M. Madihian, H. Toyoshima, N. Hayama, K. Honjo

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5 Citations (Scopus)


A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

Original languageEnglish
Pages (from-to)562-564
Number of pages3
JournalElectronics Letters
Issue number11
Publication statusPublished - 1987 Jan 1



  • Bipolar transistors
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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