A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.
|Number of pages||3|
|Publication status||Published - 1987 Jan 1|
- Bipolar transistors
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering