NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD.

Shinichi Tanaka, M. Madihian, H. Toyoshima, N. Hayama, K. Honjo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1. 5 multiplied by 10 mu m**2 realized by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

Original languageEnglish
Pages (from-to)562-564
Number of pages3
JournalElectronics Letters
Volume23
Issue number11
Publication statusPublished - 1987 Jan 1
Externally publishedYes

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Heterojunction bipolar transistors
Dry etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD. / Tanaka, Shinichi; Madihian, M.; Toyoshima, H.; Hayama, N.; Honjo, K.

In: Electronics Letters, Vol. 23, No. 11, 01.01.1987, p. 562-564.

Research output: Contribution to journalArticle

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