Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

Engineering & Materials Science

• Density of gases 53%
• Drain current 47%
• High electron mobility transistors 86%
• Sapphire 100%
• Substrates 52%
• Threshold voltage 41%
• Transconductance 44%
• Two dimensional electron gas 65%

Physics & Astronomy

• augmentation 15%
• breakdown 19%
• electron gas 23%
• field effect transistors 58%
• gas density 28%
• sapphire 63%
• threshold voltage 23%
• transconductance 27%