Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

K. Horio, H. Onodera

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)19-20
JournalProceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany
Publication statusPublished - 2010 May 17

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