Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

K. Horio, H. Onodera

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)19-20
JournalProceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany
Publication statusPublished - 2010 May 17

Cite this

@article{7514ef0bb02f4443b4bb45748e453e82,
title = "Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs",
author = "K. Horio and H. Onodera",
year = "2010",
month = "5",
day = "17",
language = "English",
pages = "19--20",
journal = "Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany",

}

TY - JOUR

T1 - Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

AU - Horio, K.

AU - Onodera, H.

PY - 2010/5/17

Y1 - 2010/5/17

M3 - Article

SP - 19

EP - 20

JO - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

JF - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

ER -