Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

K. Horio, H. Onodera

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	19-20
Journal	Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany
Publication status	Published - 2010 May 17

Cite this

Research output: Contribution to journal › Article › peer-review

@article{7514ef0bb02f4443b4bb45748e453e82,

title = "Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs",

author = "K. Horio and H. Onodera",

year = "2010",

month = may,

day = "17",

language = "English",

pages = "19--20",

journal = "Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany",

}

TY - JOUR

T1 - Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

AU - Horio, K.

AU - Onodera, H.

PY - 2010/5/17

Y1 - 2010/5/17

M3 - Article

SP - 19

EP - 20

JO - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

JF - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

ER -