Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer

Hideyuki Hanawa, Hiraku Onodera, Atsushi Nakajima, Kazushige Horio

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of the OFF-state breakdown voltage on the relative permittivity of the passivation layer r and the thickness of the passivation layer d are studied. It is shown that as r increases, the OFF-state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as r increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if the r of the insulator is higher. It is also shown that the OFF-state breakdown voltage increases as d increases because the electric field at the drain edge of the gate is weakened as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

Original languageEnglish
Article number6712055
Pages (from-to)769-775
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume61
Issue number3
DOIs
Publication statusPublished - 2014

Fingerprint

High electron mobility transistors
Electric breakdown
Passivation
Numerical analysis
Electric fields
Semiconductor materials
Buffer layers
Permittivity
aluminum gallium nitride
Electric potential

Keywords

  • 2-D analysis
  • breakdown voltage
  • GaN high electron mobility transistor (HEMT)
  • high-k passivation layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer. / Hanawa, Hideyuki; Onodera, Hiraku; Nakajima, Atsushi; Horio, Kazushige.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 3, 6712055, 2014, p. 769-775.

Research output: Contribution to journalArticle

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