Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

A. Nakajima, K. Fujii, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)104303-1-104303-6
JournalJpn. J. Appl. Phys.
Volume50
Publication statusPublished - 2011 Oct 20

Cite this

Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors. / Nakajima, A.; Fujii, K.; Horio, K.

In: Jpn. J. Appl. Phys., Vol. 50, 20.10.2011, p. 104303-1-104303-6.

Research output: Contribution to journalArticle

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