Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

A. Nakajima, K. Fujii, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)104303-1-104303-6
JournalJpn. J. Appl. Phys.
Volume50
Publication statusPublished - 2011 Oct 20

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