Original language | English |
---|---|
Pages (from-to) | 104303-1-104303-6 |
Journal | Jpn. J. Appl. Phys. |
Volume | 50 |
Publication status | Published - 2011 Oct 20 |
Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors
A. Nakajima, K. Fujii, K. Horio
Research output: Contribution to journal › Article › peer-review