| Original language | English |
|---|---|
| Journal | 2004 Asia-Pacific Microwave Conference Proceedings |
| Publication status | Published - 2004 Dec 1 |
Cite this
Horio, K., Kazami, Y., Kasai, D., & Yonemoto, K. (2004). Numerical analysis of current transients and power slump in GaAs and GaN FETs. 2004 Asia-Pacific Microwave Conference Proceedings.
Numerical analysis of current transients and power slump in GaAs and GaN FETs. / Horio, K.; Kazami, Y.; Kasai, D.; Yonemoto, K.
In: 2004 Asia-Pacific Microwave Conference Proceedings, 01.12.2004.Research output: Contribution to journal › Article
Horio, K, Kazami, Y, Kasai, D & Yonemoto, K 2004, 'Numerical analysis of current transients and power slump in GaAs and GaN FETs', 2004 Asia-Pacific Microwave Conference Proceedings.
Horio K, Kazami Y, Kasai D, Yonemoto K. Numerical analysis of current transients and power slump in GaAs and GaN FETs. 2004 Asia-Pacific Microwave Conference Proceedings. 2004 Dec 1.
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author = "K. Horio and Y. Kazami and D. Kasai and K. Yonemoto",
year = "2004",
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T1 - Numerical analysis of current transients and power slump in GaAs and GaN FETs
AU - Horio, K.
AU - Kazami, Y.
AU - Kasai, D.
AU - Yonemoto, K.
PY - 2004/12/1
Y1 - 2004/12/1
M3 - Article
JO - 2004 Asia-Pacific Microwave Conference Proceedings
JF - 2004 Asia-Pacific Microwave Conference Proceedings
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