Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs

K. Horio, A. Nakajima

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)237-239
JournalProceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy
Publication statusPublished - 2007 May 25

Cite this

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title = "Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs",
author = "K. Horio and A. Nakajima",
year = "2007",
month = "5",
day = "25",
language = "English",
pages = "237--239",
journal = "Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy",

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TY - JOUR

T1 - Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs

AU - Horio, K.

AU - Nakajima, A.

PY - 2007/5/25

Y1 - 2007/5/25

M3 - Article

SP - 237

EP - 239

JO - Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy

JF - Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy

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