NUMERICAL ANALYSIS OF ENERGY TRANSPORT EFFECTS N AN AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR.

Kazushige Horio, Hisayoshi Yanai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A numerical model for AlGaAs/GaAs HBTs is proposed in which the transport of electron energy is included by using 'hydrodynamic' equation derived from the Boltzmann equation. The results are compared with those by the conventional model, indicating the importance of the energy transport effects.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalTransactions of the Institute of Electronics and Communication Engineers of Japan. Section E
VolumeE69
Issue number4
Publication statusPublished - 1986 Apr

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Boltzmann equation
Heterojunction bipolar transistors
Numerical analysis
Numerical models
Hydrodynamics
Electrons

ASJC Scopus subject areas

  • Engineering(all)

Cite this

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title = "NUMERICAL ANALYSIS OF ENERGY TRANSPORT EFFECTS N AN AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR.",
abstract = "A numerical model for AlGaAs/GaAs HBTs is proposed in which the transport of electron energy is included by using 'hydrodynamic' equation derived from the Boltzmann equation. The results are compared with those by the conventional model, indicating the importance of the energy transport effects.",
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