Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, Y. Mitani

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)135-138
JournalProceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England
Publication statusPublished - 2001 Sep 1

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