Abstract
Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.
| Original language | English |
|---|---|
| Pages (from-to) | 1760-1764 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 51 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2004 Nov |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
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Numerical analysis of slow current transients and power compression in GaAs FETs. / Kazami, Yusuke; Kasai, Daisuke; Horio, Kazushige.
In: IEEE Transactions on Electron Devices, Vol. 51, No. 11, 11.2004, p. 1760-1764.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Numerical analysis of slow current transients and power compression in GaAs FETs
AU - Kazami, Yusuke
AU - Kasai, Daisuke
AU - Horio, Kazushige
PY - 2004/11
Y1 - 2004/11
N2 - Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.
AB - Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.
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U2 - 10.1109/TED.2004.837383
DO - 10.1109/TED.2004.837383
M3 - Article
VL - 51
SP - 1760
EP - 1764
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 11
ER -