Numerical analysis of slow current transients and power compression in GaAs FETs

Yusuke Kazami, Daisuke Kasai, Kazushige Horio

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.

Original languageEnglish
Pages (from-to)1760-1764
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number11
DOIs
Publication statusPublished - 2004 Nov

Fingerprint

Field effect transistors
numerical analysis
Numerical analysis
Impact ionization
field effect transistors
traps
Surface states
Electric potential
electric potential
time lag
ionization
Substrates
curves
Compaction
gallium arsenide
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Numerical analysis of slow current transients and power compression in GaAs FETs. / Kazami, Yusuke; Kasai, Daisuke; Horio, Kazushige.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 11, 11.2004, p. 1760-1764.

Research output: Contribution to journalArticle

@article{f78b43ffe0494bc6b438d53e4586cb0d,
title = "Numerical analysis of slow current transients and power compression in GaAs FETs",
abstract = "Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.",
author = "Yusuke Kazami and Daisuke Kasai and Kazushige Horio",
year = "2004",
month = "11",
doi = "10.1109/TED.2004.837383",
language = "English",
volume = "51",
pages = "1760--1764",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Numerical analysis of slow current transients and power compression in GaAs FETs

AU - Kazami, Yusuke

AU - Kasai, Daisuke

AU - Horio, Kazushige

PY - 2004/11

Y1 - 2004/11

N2 - Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.

AB - Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.

UR - http://www.scopus.com/inward/record.url?scp=8144230246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8144230246&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.837383

DO - 10.1109/TED.2004.837383

M3 - Article

VL - 51

SP - 1760

EP - 1764

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -