Numerical analysis of slow current transients and power compression in GaAs FETs

Yusuke Kazami; Daisuke Kasai; Kazushige Horio

doi:10.1109/TED.2004.837383

Numerical analysis of slow current transients and power compression in GaAs FETs

Yusuke Kazami, Daisuke Kasai, Kazushige Horio

Research output: Contribution to journal › Article

29 Citations (Scopus)

Abstract

Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.

Original language	English
Pages (from-to)	1760-1764
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TED.2004.837383
Publication status	Published - 2004 Nov 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Kazami, Y., Kasai, D., & Horio, K. (2004). Numerical analysis of slow current transients and power compression in GaAs FETs. IEEE Transactions on Electron Devices, 51(11), 1760-1764. https://doi.org/10.1109/TED.2004.837383

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