Numerical analysis of substrate effect on turn-on characteristics of GaAs MESFET

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Abstract

The effects of substrate trap 'EL2' on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.

Original languageEnglish
Pages (from-to)343-344
Number of pages2
JournalElectronics Letters
Volume35
Issue number4
DOIs
Publication statusPublished - 1999 Feb 18

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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