Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Kazushige Horio, Akira Wakabayashi

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28 Citations (Scopus)

Abstract

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

Original languageEnglish
Pages (from-to)2270-2276
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume47
Issue number12
DOIs
Publication statusPublished - 2000 Dec 1

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Keywords

  • 2-D simulation
  • GaAs
  • Impact ionization
  • Kink
  • MESFET
  • Surface state
  • Trap

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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