Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Kazushige Horio, Akira Wakabayashi

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

Original languageEnglish
Pages (from-to)2270-2276
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume47
Issue number12
DOIs
Publication statusPublished - 2000 Dec

Fingerprint

Surface states
numerical analysis
Numerical analysis
field effect transistors
Impact ionization
Electric potential
electric potential
Electric space charge
space charge
simulation
trapping
traps
ionization
output
Computer simulation
Substrates
profiles
gallium arsenide

Keywords

  • 2-D simulation
  • GaAs
  • Impact ionization
  • Kink
  • MESFET
  • Surface state
  • Trap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs. / Horio, Kazushige; Wakabayashi, Akira.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 12, 12.2000, p. 2270-2276.

Research output: Contribution to journalArticle

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