### Abstract

A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

Original language | English |
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Title of host publication | NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit |

Publisher | Publ by IEEE |

Pages | 231-236 |

Number of pages | 6 |

ISBN (Print) | 0906783720, 9780906783726 |

DOIs | |

Publication status | Published - 1987 |

Event | NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Dublin, Ireland Duration: 1987 Jun 17 → 1987 Jun 19 |

### Publication series

Name | NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit |
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### Other

Other | NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits |
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City | Dublin, Ireland |

Period | 87/6/17 → 87/6/19 |

### ASJC Scopus subject areas

- Engineering(all)

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## Cite this

*NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit*(pp. 231-236). (NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit). Publ by IEEE. https://doi.org/10.1109/nascod.1987.721185