Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

Kazushige Horio, H. Yanai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

Original languageEnglish
Title of host publicationNASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit
EditorsJ.J.H. Miller
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages231-236
Number of pages6
ISBN (Print)0906783720
Publication statusPublished - 1987
EventNASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Dublin, Ireland
Duration: 1987 Jun 171987 Jun 19

Other

OtherNASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits
CityDublin, Ireland
Period87/6/1787/6/19

Fingerprint

Heterojunction bipolar transistors
Electrons
Boltzmann equation
Cutoff frequency
Numerical models
Hydrodynamics

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horio, K., & Yanai, H. (1987). Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. In J. J. H. Miller (Ed.), NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit (pp. 231-236). Piscataway, NJ, United States: Publ by IEEE.

Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. / Horio, Kazushige; Yanai, H.

NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. ed. / J.J.H. Miller. Piscataway, NJ, United States : Publ by IEEE, 1987. p. 231-236.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K & Yanai, H 1987, Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. in JJH Miller (ed.), NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Publ by IEEE, Piscataway, NJ, United States, pp. 231-236, NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Dublin, Ireland, 87/6/17.
Horio K, Yanai H. Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. In Miller JJH, editor, NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Piscataway, NJ, United States: Publ by IEEE. 1987. p. 231-236
Horio, Kazushige ; Yanai, H. / Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. editor / J.J.H. Miller. Piscataway, NJ, United States : Publ by IEEE, 1987. pp. 231-236
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