Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

K. Horio; H. Yanai

doi:10.1109/nascod.1987.721185

Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

K. Horio, H. Yanai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

Original language	English
Title of host publication	NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit
Publisher	Publ by IEEE
Pages	231-236
Number of pages	6
ISBN (Print)	0906783720, 9780906783726
DOIs	https://doi.org/10.1109/nascod.1987.721185
Publication status	Published - 1987
Event	NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Dublin, Ireland Duration: 1987 Jun 17 → 1987 Jun 19

Publication series

Name	NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit

Other

Other	NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits
City	Dublin, Ireland
Period	87/6/17 → 87/6/19

ASJC Scopus subject areas

Engineering(all)

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10.1109/nascod.1987.721185

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Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. / Horio, K.; Yanai, H.

NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. Publ by IEEE, 1987. p. 231-236 (NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Horio, K & Yanai, H 1987, Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors. in NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit. NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit, Publ by IEEE, pp. 231-236, NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, Dublin, Ireland, 87/6/17. https://doi.org/10.1109/nascod.1987.721185

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abstract = "A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.",

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doi = "10.1109/nascod.1987.721185",

language = "English",

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series = "NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit",

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booktitle = "NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit",

note = "NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits ; Conference date: 17-06-1987 Through 19-06-1987",

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PB - Publ by IEEE

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Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

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