Original language | English |
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Pages (from-to) | 210-213 |
Journal | Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece |
Publication status | Published - 2001 Sep 1 |
Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs
A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio
Research output: Contribution to journal › Article › peer-review