Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)210-213
JournalProceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece
Publication statusPublished - 2001 Sep 1

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