| Original language | English |
|---|---|
| Pages (from-to) | 210-213 |
| Journal | Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece |
| Publication status | Published - 2001 Sep 1 |
Cite this
Wakabayashi, A., Mitani, Y., Kasai, D., & Horio, K. (2001). Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs. Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece, 210-213.
Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs. / Wakabayashi, A.; Mitani, Y.; Kasai, D.; Horio, K.
In: Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece, 01.09.2001, p. 210-213.Research output: Contribution to journal › Article
Wakabayashi, A, Mitani, Y, Kasai, D & Horio, K 2001, 'Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs', Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece, pp. 210-213.
Wakabayashi A, Mitani Y, Kasai D, Horio K. Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs. Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece. 2001 Sep 1;210-213.
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