Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	210-213
Journal	Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece
Publication status	Published - 2001 Sep 1

Cite this

@article{b1b5de567878415796d8e91be16f18a2,

title = "Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs",

author = "A. Wakabayashi and Y. Mitani and D. Kasai and K. Horio",

year = "2001",

month = sep,

day = "1",

language = "English",

pages = "210--213",

journal = "Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece",

}

TY - JOUR

T1 - Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs

AU - Wakabayashi, A.

AU - Mitani, Y.

AU - Kasai, D.

AU - Horio, K.

PY - 2001/9/1

Y1 - 2001/9/1

M3 - Article

SP - 210

EP - 213

JO - Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece

JF - Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece

ER -