Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)210-213
JournalProceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece
Publication statusPublished - 2001 Sep 1

Cite this

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title = "Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs",
author = "A. Wakabayashi and Y. Mitani and D. Kasai and K. Horio",
year = "2001",
month = "9",
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language = "English",
pages = "210--213",
journal = "Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece",

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TY - JOUR

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AU - Wakabayashi, A.

AU - Mitani, Y.

AU - Kasai, D.

AU - Horio, K.

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Y1 - 2001/9/1

M3 - Article

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EP - 213

JO - Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece

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