Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

F. Hafiz, M. Kumeno, T. Tanaka, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Xi'an, Shaanxi
Duration: 2013 Oct 222013 Oct 25

Other

Other2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013
CityXi'an, Shaanxi
Period13/10/2213/10/25

Fingerprint

Surface states
Field effect transistors
Passivation
Transient analysis
Electric potential

Keywords

  • current slump
  • drain lag
  • field plate
  • GaAs FET
  • gate lag
  • surface state

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Hafiz, F., Kumeno, M., Tanaka, T., & Horio, K. (2013). Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. In IEEE Region 10 Annual International Conference, Proceedings/TENCON [6718452] https://doi.org/10.1109/TENCON.2013.6718452

Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. / Hafiz, F.; Kumeno, M.; Tanaka, T.; Horio, Kazushige.

IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2013. 6718452.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hafiz, F, Kumeno, M, Tanaka, T & Horio, K 2013, Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. in IEEE Region 10 Annual International Conference, Proceedings/TENCON., 6718452, 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013, Xi'an, Shaanxi, 13/10/22. https://doi.org/10.1109/TENCON.2013.6718452
Hafiz F, Kumeno M, Tanaka T, Horio K. Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. In IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2013. 6718452 https://doi.org/10.1109/TENCON.2013.6718452
Hafiz, F. ; Kumeno, M. ; Tanaka, T. ; Horio, Kazushige. / Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2013.
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