Numerical Modelling of GaAs MESFET’s on the Semi-insulating Subrtrate Compensated by Deep Levels

K.Horio K.Horio, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)339-342
JournalProceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany
Publication statusPublished - 1989 Sep 1

Cite this

@article{b91a4b58d6624938a89e04e0a1ef873a,
title = "Numerical Modelling of GaAs MESFET’s on the Semi-insulating Subrtrate Compensated by Deep Levels",
author = "K.Horio K.Horio and H.Yanai H.Yanai and Kazushige Horio",
year = "1989",
month = "9",
day = "1",
language = "English",
pages = "339--342",
journal = "Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany",

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TY - JOUR

T1 - Numerical Modelling of GaAs MESFET’s on the Semi-insulating Subrtrate Compensated by Deep Levels

AU - K.Horio, K.Horio

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1989/9/1

Y1 - 1989/9/1

M3 - Article

SP - 339

EP - 342

JO - Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany

JF - Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany

ER -