Numerical Modelling of GaAs MESFET’s on the Semi-insulating Subrtrate Compensated by Deep Levels

K.Horio K.Horio, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	339-342
Journal	Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany
Publication status	Published - 1989 Sept 1

Cite this

@article{b91a4b58d6624938a89e04e0a1ef873a,

title = "Numerical Modelling of GaAs MESFET{\textquoteright}s on the Semi-insulating Subrtrate Compensated by Deep Levels",

author = "K.Horio K.Horio and H.Yanai H.Yanai and Kazushige Horio",

year = "1989",

month = sep,

day = "1",

language = "English",

pages = "339--342",

journal = "Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany",

}

TY - JOUR

T1 - Numerical Modelling of GaAs MESFET’s on the Semi-insulating Subrtrate Compensated by Deep Levels

AU - K.Horio, K.Horio

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1989/9/1

Y1 - 1989/9/1

M3 - Article

SP - 339

EP - 342

JO - Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany

JF - Proceedings of 1989 International Symposium on Signals, Systems and Electronics, Erlangen, Germany

ER -