Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters.

Kazushige Horio, Yasunori Iwatsu, Hisayoshi Yanai

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.

Original languageEnglish
Pages (from-to)617-624
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume36
Issue number4 pt 1
DOIs
Publication statusPublished - 1989 Apr

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
accumulators
aluminum gallium arsenides
heterojunctions
Cutoff frequency
Computer simulation
depletion
cut-off
simulation
static models
Energy gap
transit time
Doping (additives)
charging
energy
Electrons
electron energy
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters. / Horio, Kazushige; Iwatsu, Yasunori; Yanai, Hisayoshi.

In: IEEE Transactions on Electron Devices, Vol. 36, No. 4 pt 1, 04.1989, p. 617-624.

Research output: Contribution to journalArticle

@article{84fb354e860544138dbec27dd8b4a95c,
title = "Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters.",
abstract = "Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.",
author = "Kazushige Horio and Yasunori Iwatsu and Hisayoshi Yanai",
year = "1989",
month = "4",
doi = "10.1109/16.22465",
language = "English",
volume = "36",
pages = "617--624",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4 pt 1",

}

TY - JOUR

T1 - Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters.

AU - Horio, Kazushige

AU - Iwatsu, Yasunori

AU - Yanai, Hisayoshi

PY - 1989/4

Y1 - 1989/4

N2 - Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.

AB - Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.

UR - http://www.scopus.com/inward/record.url?scp=0024646776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024646776&partnerID=8YFLogxK

U2 - 10.1109/16.22465

DO - 10.1109/16.22465

M3 - Article

VL - 36

SP - 617

EP - 624

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4 pt 1

ER -