Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters.

Kazushige Horio, Yasunori Iwatsu, Hisayoshi Yanai

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Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.

Original languageEnglish
Pages (from-to)617-624
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number4 pt 1
Publication statusPublished - 1989 Apr


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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