Numerical simulation of drain-current transients and current compression in GaN MESFETs

H. Takayanagi, K. Itagaki, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Title of host publication2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages55-58
Number of pages4
Volume3
Publication statusPublished - 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA
Duration: 2006 May 72006 May 11

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CityBoston, MA
Period06/5/706/5/11

Fingerprint

Drain current
Buffer layers
Computer simulation
Field effect transistors
Electric potential
Compensation and Redress

Keywords

  • Current compression
  • Deep level
  • FET
  • GaN

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Takayanagi, H., Itagaki, K., & Horio, K. (2006). Numerical simulation of drain-current transients and current compression in GaN MESFETs. In 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings (Vol. 3, pp. 55-58)

Numerical simulation of drain-current transients and current compression in GaN MESFETs. / Takayanagi, H.; Itagaki, K.; Horio, Kazushige.

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. Vol. 3 2006. p. 55-58.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takayanagi, H, Itagaki, K & Horio, K 2006, Numerical simulation of drain-current transients and current compression in GaN MESFETs. in 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. vol. 3, pp. 55-58, 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, 06/5/7.
Takayanagi H, Itagaki K, Horio K. Numerical simulation of drain-current transients and current compression in GaN MESFETs. In 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. Vol. 3. 2006. p. 55-58
Takayanagi, H. ; Itagaki, K. ; Horio, Kazushige. / Numerical simulation of drain-current transients and current compression in GaN MESFETs. 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. Vol. 3 2006. pp. 55-58
@inproceedings{01c9e90f78b14527b7e60b8826f18933,
title = "Numerical simulation of drain-current transients and current compression in GaN MESFETs",
abstract = "Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.",
keywords = "Current compression, Deep level, FET, GaN",
author = "H. Takayanagi and K. Itagaki and Kazushige Horio",
year = "2006",
language = "English",
volume = "3",
pages = "55--58",
booktitle = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings",

}

TY - GEN

T1 - Numerical simulation of drain-current transients and current compression in GaN MESFETs

AU - Takayanagi, H.

AU - Itagaki, K.

AU - Horio, Kazushige

PY - 2006

Y1 - 2006

N2 - Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

AB - Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

KW - Current compression

KW - Deep level

KW - FET

KW - GaN

UR - http://www.scopus.com/inward/record.url?scp=33845200859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845200859&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33845200859

VL - 3

SP - 55

EP - 58

BT - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

ER -