Numerical simulation of drain-current transients and current compression in GaN MESFETs

H. Takayanagi, K. Itagaki, K. Horio

Research output: Contribution to conferencePaper

Abstract

Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Pages55-58
Number of pages4
Publication statusPublished - 2006 Dec 8
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: 2006 May 72006 May 11

Conference

Conference2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period06/5/706/5/11

Keywords

  • Current compression
  • Deep level
  • FET
  • GaN

ASJC Scopus subject areas

  • Engineering(all)

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    Takayanagi, H., Itagaki, K., & Horio, K. (2006). Numerical simulation of drain-current transients and current compression in GaN MESFETs. 55-58. Paper presented at 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.