Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

It is found that higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. The drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes significant for shorter gate-length MESFETs on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFETs, the acceptor density as well as the trap density in the semi-insulating substrate must be high.

Original languageEnglish
Pages (from-to)1778-1785
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume35
Issue number11 pt 2
DOIs
Publication statusPublished - 1988 Nov

Fingerprint

field effect transistors
traps
Computer simulation
Substrates
simulation
Drain current
gallium arsenide
Electric space charge
space charge
Electrons
Electric potential
electric potential
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps. / Horio, Kazushige; Yanai, Hisayoshi; Ikoma, Toshiaki.

In: IEEE Transactions on Electron Devices, Vol. 35, No. 11 pt 2, 11.1988, p. 1778-1785.

Research output: Contribution to journalArticle

@article{9cb29dfae1064f9aab4119755685fbae,
title = "Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps",
abstract = "It is found that higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. The drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes significant for shorter gate-length MESFETs on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFETs, the acceptor density as well as the trap density in the semi-insulating substrate must be high.",
author = "Kazushige Horio and Hisayoshi Yanai and Toshiaki Ikoma",
year = "1988",
month = "11",
doi = "10.1109/16.7387",
language = "English",
volume = "35",
pages = "1778--1785",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11 pt 2",

}

TY - JOUR

T1 - Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps

AU - Horio, Kazushige

AU - Yanai, Hisayoshi

AU - Ikoma, Toshiaki

PY - 1988/11

Y1 - 1988/11

N2 - It is found that higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. The drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes significant for shorter gate-length MESFETs on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFETs, the acceptor density as well as the trap density in the semi-insulating substrate must be high.

AB - It is found that higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. The drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes significant for shorter gate-length MESFETs on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFETs, the acceptor density as well as the trap density in the semi-insulating substrate must be high.

UR - http://www.scopus.com/inward/record.url?scp=0024105622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024105622&partnerID=8YFLogxK

U2 - 10.1109/16.7387

DO - 10.1109/16.7387

M3 - Article

VL - 35

SP - 1778

EP - 1785

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11 pt 2

ER -