Numerical Simulation of GaAs MESFET’s on the Semi-insutating Substrate Compensated by Deep Traps

K.Horio K.Horio, H.Yanai H.Yanai, T.Ikoma T.Ikoma, Kazushige Horio

Research output: Contribution to journalArticle

57 Citations (Scopus)
Original languageEnglish
Pages (from-to)1778-1785
JournalIEEE Trans.Electron Devices
Volume35
Publication statusPublished - 1988 Nov 1

Cite this

Numerical Simulation of GaAs MESFET’s on the Semi-insutating Substrate Compensated by Deep Traps. / K.Horio, K.Horio; H.Yanai, H.Yanai; T.Ikoma, T.Ikoma; Horio, Kazushige.

In: IEEE Trans.Electron Devices, Vol. 35, 01.11.1988, p. 1778-1785.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; H.Yanai, H.Yanai ; T.Ikoma, T.Ikoma ; Horio, Kazushige. / Numerical Simulation of GaAs MESFET’s on the Semi-insutating Substrate Compensated by Deep Traps. In: IEEE Trans.Electron Devices. 1988 ; Vol. 35. pp. 1778-1785.
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