Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journalArticle

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)1371-1379
JournalIEEE Trans.Microwave Theory Tech.
Volume37
Publication statusPublished - 1989 Sep 1

Cite this

Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps. / K.Horio, K.Horio; Y.Fuseya, Y.Fuseya; H.Kusuki, H.Kusuki; H.Yanai, H.Yanai; Horio, Kazushige.

In: IEEE Trans.Microwave Theory Tech., Vol. 37, 01.09.1989, p. 1371-1379.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; Y.Fuseya, Y.Fuseya ; H.Kusuki, H.Kusuki ; H.Yanai, H.Yanai ; Horio, Kazushige. / Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps. In: IEEE Trans.Microwave Theory Tech. 1989 ; Vol. 37. pp. 1371-1379.
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