Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journalArticle

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)1371-1379
JournalIEEE Trans.Microwave Theory Tech.
Volume37
Publication statusPublished - 1989 Sep 1

Cite this

K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y., & Horio, K. (1989). Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps. IEEE Trans.Microwave Theory Tech., 37, 1371-1379.