Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

Original languageEnglish
Pages (from-to)295-296
Number of pages2
JournalElectronics Letters
Volume28
Issue number3
DOIs
Publication statusPublished - 1992 Jan

Keywords

  • Field-effect transistors
  • Semiconductor devices and materials
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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