Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

Original languageEnglish
Pages (from-to)295-296
Number of pages2
JournalElectronics Letters
Volume28
Issue number3
Publication statusPublished - 1992 Jan 1

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Drain current
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs. / Horio, Kazushige.

In: Electronics Letters, Vol. 28, No. 3, 01.01.1992, p. 295-296.

Research output: Contribution to journalArticle

@article{4de772a2fead4fdfbb33c3115d811c12,
title = "Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs",
abstract = "Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.",
author = "Kazushige Horio",
year = "1992",
month = "1",
day = "1",
language = "English",
volume = "28",
pages = "295--296",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "3",

}

TY - JOUR

T1 - Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

AU - Horio, Kazushige

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

UR - http://www.scopus.com/inward/record.url?scp=0026441654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026441654&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0026441654

VL - 28

SP - 295

EP - 296

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 3

ER -