Observation of the flux line lattice and crystal defects in Bi-Sr-Ca-Cu-O single crystals

K. Furusawa, Y. Zhao, N. Chikumoto, K. Kishio, T. Nagatomo, Masato Murakami

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have observed flux line lattice (FLL) structure in two different types of Bi2Sr2CaCu2O8+δ (Bi-2212) single crystals with different pinning by using a Bitter decoration technique. We have also observed the microstructure and analyzed local chemical composition with wave dispersive spectroscopic analyses. In a low Jc sample, we found two types of line defects, one with Ca-rich and the other with Ca-deficient. These defects extended almost parallel to the growth direction, which caused a distortion in the FLL structure. In contrast, no such defects were observed in the matrix in a high-Jc sample, and a relatively ordered FLL was observed.

Original languageEnglish
Pages (from-to)353-358
Number of pages6
JournalPhysica C: Superconductivity and its Applications
Volume392-396
Issue numberPART 1
DOIs
Publication statusPublished - 2003 Oct
Externally publishedYes

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Crystal defects
crystal defects
Single crystals
Fluxes
Defects
single crystals
defects
Crystal lattices
chemical composition
microstructure
Microstructure
matrices
Chemical analysis

Keywords

  • Bi-2212
  • Bitter decoration technique
  • Line defect
  • Magneto-optical imaging

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Observation of the flux line lattice and crystal defects in Bi-Sr-Ca-Cu-O single crystals. / Furusawa, K.; Zhao, Y.; Chikumoto, N.; Kishio, K.; Nagatomo, T.; Murakami, Masato.

In: Physica C: Superconductivity and its Applications, Vol. 392-396, No. PART 1, 10.2003, p. 353-358.

Research output: Contribution to journalArticle

Furusawa, K. ; Zhao, Y. ; Chikumoto, N. ; Kishio, K. ; Nagatomo, T. ; Murakami, Masato. / Observation of the flux line lattice and crystal defects in Bi-Sr-Ca-Cu-O single crystals. In: Physica C: Superconductivity and its Applications. 2003 ; Vol. 392-396, No. PART 1. pp. 353-358.
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