On the carrier mobility in forward-biased semiconductor barriers

Mark Lundstrom, Shinichi Tanaka

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A simple one-speed solution to the Boltzmann equation is used to evaluate the mobility and diffusion coefficient for carriers in forward-biased semiconductor barriers. The analysis shows that although the average kinetic energy of carriers remains near thermal equilibrium, the mobility and diffusion coefficient are strongly reduced by the built-in field. Conventional macroscopic transport equations, which treat the carrier mobility and diffusion coefficient as single valued functions of the kinetic energy will improperly treat transport in forward-biased barriers. The results are important for the careful analysis of metal-semiconductor and heterojunction diodes.

Original languageEnglish
Pages (from-to)962
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995
Externally publishedYes

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carrier mobility
diffusion coefficient
coefficients
kinetic energy
semiconductor diodes
heterojunctions
diodes
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

On the carrier mobility in forward-biased semiconductor barriers. / Lundstrom, Mark; Tanaka, Shinichi.

In: Applied Physics Letters, 1995, p. 962.

Research output: Contribution to journalArticle

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