On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

Subramaniam Arulkumaran, Takashi Egawa, Lawrence Selvaraj, Hiroyasu Ishikawa

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Influences of gate-recess etching with BCl3 plasma in drain current (ID) collapse were performed on different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17% of decrease in ID collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to non-recessed HEMTs. However, increase (∼47%) of ID collapse was observed in i-GaN cap layer HEMTs. The decrease of ID collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of ID collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated IDS-VDS characteristics. An increase of gate leakage current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number8-11
DOIs
Publication statusPublished - 2006 Mar 10
Externally publishedYes

Fingerprint

recesses
High electron mobility transistors
high electron mobility transistors
caps
Etching
etching
Drain current
traps
Plasmas
damage
Transconductance
transconductance
Leakage currents
leakage
Current density
trapping
Doping (additives)
current density

Keywords

  • AlGaN/GaN HEMTs, GaN cap layer
  • Drain current collapse
  • Gate-recess
  • Leakage current
  • Trapping effect

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors. / Arulkumaran, Subramaniam; Egawa, Takashi; Selvaraj, Lawrence; Ishikawa, Hiroyasu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 8-11, 10.03.2006.

Research output: Contribution to journalArticle

@article{0f43e5cfc6714a01ac16496f5a2803c1,
title = "On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors",
abstract = "Influences of gate-recess etching with BCl3 plasma in drain current (ID) collapse were performed on different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17{\%} of decrease in ID collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to non-recessed HEMTs. However, increase (∼47{\%}) of ID collapse was observed in i-GaN cap layer HEMTs. The decrease of ID collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of ID collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated IDS-VDS characteristics. An increase of gate leakage current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.",
keywords = "AlGaN/GaN HEMTs, GaN cap layer, Drain current collapse, Gate-recess, Leakage current, Trapping effect",
author = "Subramaniam Arulkumaran and Takashi Egawa and Lawrence Selvaraj and Hiroyasu Ishikawa",
year = "2006",
month = "3",
day = "10",
doi = "10.1143/JJAP.45.L220",
language = "English",
volume = "45",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8-11",

}

TY - JOUR

T1 - On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

AU - Arulkumaran, Subramaniam

AU - Egawa, Takashi

AU - Selvaraj, Lawrence

AU - Ishikawa, Hiroyasu

PY - 2006/3/10

Y1 - 2006/3/10

N2 - Influences of gate-recess etching with BCl3 plasma in drain current (ID) collapse were performed on different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17% of decrease in ID collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to non-recessed HEMTs. However, increase (∼47%) of ID collapse was observed in i-GaN cap layer HEMTs. The decrease of ID collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of ID collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated IDS-VDS characteristics. An increase of gate leakage current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.

AB - Influences of gate-recess etching with BCl3 plasma in drain current (ID) collapse were performed on different cap layers (i-GaN, n-GaN, and p-GaN) grown AlGaN/GaN high-electron-mobility transistors (HEMTs). Due to the decrease of dynamic-source-resistance by gate-recess, the increase of maximum drain current density and maximum extrinsic transconductance were observed in all cap layers grown AlGaN/GaN HEMTs. After gate-recess etching, about 14 and 17% of decrease in ID collapse were observed on n-GaN and p-GaN cap layers HEMTs, respectively when compared to non-recessed HEMTs. However, increase (∼47%) of ID collapse was observed in i-GaN cap layer HEMTs. The decrease of ID collapse in doped GaN cap layer HEMTs is possibly due to the compensation of dopant related traps with plasma induced traps. The increase of ID collapse in i-GaN cap layer HEMTs may be due to the incorporation of damage related traps by gate-recess etching. The decrease and increase of trapping effects were qualitatively confirmed by white-light illuminated IDS-VDS characteristics. An increase of gate leakage current in all recessed gate AlGaN/GaN HEMTs are due to the BCl3 plasma induced damage.

KW - AlGaN/GaN HEMTs, GaN cap layer

KW - Drain current collapse

KW - Gate-recess

KW - Leakage current

KW - Trapping effect

UR - http://www.scopus.com/inward/record.url?scp=33645990028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645990028&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L220

DO - 10.1143/JJAP.45.L220

M3 - Article

VL - 45

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8-11

ER -