One-Carrier Numerical Model for GaAs MESFET’s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)506-509
JournalTrans. IEICE
Volume73
Publication statusPublished - 1990 Apr 1

Cite this

One-Carrier Numerical Model for GaAs MESFET’s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels. / K.Horio, K.Horio; Y.Fuseya, Y.Fuseya; H.Kusuki, H.Kusuki; H.Yanai, H.Yanai; Horio, Kazushige.

In: Trans. IEICE, Vol. 73, 01.04.1990, p. 506-509.

Research output: Contribution to journalArticle

K.Horio, K.Horio ; Y.Fuseya, Y.Fuseya ; H.Kusuki, H.Kusuki ; H.Yanai, H.Yanai ; Horio, Kazushige. / One-Carrier Numerical Model for GaAs MESFET’s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels. In: Trans. IEICE. 1990 ; Vol. 73. pp. 506-509.
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