Optical absorption and photoluminescence studies of n-type GaN

Guang Yuan Zhao, Hiroyasu Ishikawa, Hao Jiang, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The Si-doping dependence of absorption coefficient and photoluminescence (PL) spectra of GaN grown by metalorganic chemical vapor deposition (MOCVD) was studied at room temperature. Band gap narrowing and band tailing effect were observed in the absorption spectra of GaN samples with high carrier concentration. A clear red shift and broadening of the PL emission peak were observed with increasing dopant concentration, which could also be attributed to the band tailing effect. This study shows that the band tailing effect plays an important role in determining the optical properties of Si-doped GaN.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number9 A/B
Publication statusPublished - 1999 Sep 15
Externally publishedYes

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Tailings
Light absorption
Photoluminescence
optical absorption
photoluminescence
Doping (additives)
Metallorganic chemical vapor deposition
Carrier concentration
Absorption spectra
Energy gap
Optical properties
red shift
metalorganic chemical vapor deposition
absorptivity
absorption spectra
optical properties
room temperature
Temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical absorption and photoluminescence studies of n-type GaN. / Zhao, Guang Yuan; Ishikawa, Hiroyasu; Jiang, Hao; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 38, No. 9 A/B, 15.09.1999.

Research output: Contribution to journalArticle

Zhao, Guang Yuan ; Ishikawa, Hiroyasu ; Jiang, Hao ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / Optical absorption and photoluminescence studies of n-type GaN. In: Japanese Journal of Applied Physics, Part 2: Letters. 1999 ; Vol. 38, No. 9 A/B.
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