| Original language | English |
|---|---|
| Pages (from-to) | 5418-5422 |
| Journal | Journal of Applied Physics |
| Volume | 76 |
| Publication status | Published - 1994 Nov 1 |
Cite this
Ishii, K., Ohki, Y., & Nishikawa, H. (1994). Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. Journal of Applied Physics, 76, 5418-5422.
Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. / Ishii, K.; Ohki, Y.; Nishikawa, H.
In: Journal of Applied Physics, Vol. 76, 01.11.1994, p. 5418-5422.Research output: Contribution to journal › Article
Ishii, K, Ohki, Y & Nishikawa, H 1994, 'Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane', Journal of Applied Physics, vol. 76, pp. 5418-5422.
Ishii K, Ohki Y, Nishikawa H. Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. Journal of Applied Physics. 1994 Nov 1;76:5418-5422.
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title = "Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane",
author = "K. Ishii and Y. Ohki and H. Nishikawa",
year = "1994",
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AU - Ishii, K.
AU - Ohki, Y.
AU - Nishikawa, H.
PY - 1994/11/1
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M3 - Article
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EP - 5422
JO - Journal of Applied Physics
JF - Journal of Applied Physics
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