Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii, Yoshimichi Ohki, Hiroyuki Nishikawa

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

Original languageEnglish
Pages (from-to)5418-5422
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number9
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

vapor deposition
decay
luminescence
exponential functions
synchrotron radiation
oxygen
curves
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. / Ishii, Keisuke; Ohki, Yoshimichi; Nishikawa, Hiroyuki.

In: Journal of Applied Physics, Vol. 76, No. 9, 1994, p. 5418-5422.

Research output: Contribution to journalArticle

@article{a4f19d3546414f7aa6e7d2d9dc6155ec,
title = "Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane",
abstract = "Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.",
author = "Keisuke Ishii and Yoshimichi Ohki and Hiroyuki Nishikawa",
year = "1994",
doi = "10.1063/1.357196",
language = "English",
volume = "76",
pages = "5418--5422",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

AU - Ishii, Keisuke

AU - Ohki, Yoshimichi

AU - Nishikawa, Hiroyuki

PY - 1994

Y1 - 1994

N2 - Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

AB - Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

UR - http://www.scopus.com/inward/record.url?scp=0004359216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004359216&partnerID=8YFLogxK

U2 - 10.1063/1.357196

DO - 10.1063/1.357196

M3 - Article

AN - SCOPUS:0004359216

VL - 76

SP - 5418

EP - 5422

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -