Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii, Yoshimichi Ohki, Hiroyuki Nishikawa

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Abstract

Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

Original languageEnglish
Pages (from-to)5418-5422
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number9
DOIs
Publication statusPublished - 1994 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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