Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

T. Egawa, Hiroyasu Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron-beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10-3, 1.9×10-3 and 3.9×10-3h-1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

Original languageEnglish
Pages (from-to)830-832
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number6
Publication statusPublished - 1996 Aug 5
Externally publishedYes

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metalorganic chemical vapor deposition
sapphire
light emitting diodes
degradation
cathodoluminescence
electroluminescence
ambient temperature
vapor deposition
electron beams
current density
activation energy
propagation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition. / Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.; Umeno, M.

In: Applied Physics Letters, Vol. 69, No. 6, 05.08.1996, p. 830-832.

Research output: Contribution to journalArticle

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