Optical isolator with Si guiding layer fabricated by photosensitive adhesive bonding

Hideki Yokoi; S. Choowitsakunlert; K. Kobayashi; K. Takagiwa

doi:10.1149/07509.0215ecst

Optical isolator with Si guiding layer fabricated by photosensitive adhesive bonding

Hideki Yokoi, S. Choowitsakunlert, K. Kobayashi, K. Takagiwa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

An optical isolator employing a nonreciprocal guided-radiation mode conversion is described. The optical isolator composes of a magneto-optic waveguide with a Si guiding layer, which can be realized by photosensitive adhesive bonding. The optical isolator was designed at a wavelength of 1.55 μm. Relationship of waveguide parameters was clarified for isolator operation. Dependence of the thickness of an adhesive layer was investigated for the design of the optical isolator.

Original language	English
Title of host publication	Semiconductor Wafer Bonding: Science, Technology and Applications 14
Publisher	Electrochemical Society Inc.
Pages	215-220
Number of pages	6
Volume	75
Edition	9
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07509.0215ecst
Publication status	Published - 2016
Event	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Other

Other	Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
Country	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

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Optical isolator with Si guiding layer fabricated by photosensitive adhesive bonding. / Yokoi, Hideki; Choowitsakunlert, S.; Kobayashi, K.; Takagiwa, K.

Semiconductor Wafer Bonding: Science, Technology and Applications 14. Vol. 75 9. ed. Electrochemical Society Inc., 2016. p. 215-220.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yokoi, H, Choowitsakunlert, S, Kobayashi, K & Takagiwa, K 2016, Optical isolator with Si guiding layer fabricated by photosensitive adhesive bonding. in Semiconductor Wafer Bonding: Science, Technology and Applications 14. 9 edn, vol. 75, Electrochemical Society Inc., pp. 215-220, Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07509.0215ecst

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abstract = "An optical isolator employing a nonreciprocal guided-radiation mode conversion is described. The optical isolator composes of a magneto-optic waveguide with a Si guiding layer, which can be realized by photosensitive adhesive bonding. The optical isolator was designed at a wavelength of 1.55 μm. Relationship of waveguide parameters was clarified for isolator operation. Dependence of the thickness of an adhesive layer was investigated for the design of the optical isolator.",

author = "Hideki Yokoi and S. Choowitsakunlert and K. Kobayashi and K. Takagiwa",

year = "2016",

doi = "10.1149/07509.0215ecst",

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AU - Takagiwa, K.

PY - 2016

Y1 - 2016

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AB - An optical isolator employing a nonreciprocal guided-radiation mode conversion is described. The optical isolator composes of a magneto-optic waveguide with a Si guiding layer, which can be realized by photosensitive adhesive bonding. The optical isolator was designed at a wavelength of 1.55 μm. Relationship of waveguide parameters was clarified for isolator operation. Dependence of the thickness of an adhesive layer was investigated for the design of the optical isolator.

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Y2 - 2 October 2016 through 7 October 2016

ER -

Optical isolator with Si guiding layer fabricated by photosensitive adhesive bonding

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