Optical isolator with Si guiding layer fabricated by uv-activated bonding

Hideki Yokoi, K. Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift has been studied. The optical isolator is comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure, which is fabricated by wafer bonding technique. The nonreciprocal phase shift was calculated for magneto-optic waveguides with various layer structures. Wafer bonding between a garnet crystal and Si was also investigated.

Original languageEnglish
Title of host publicationECS Transactions
Pages155-161
Number of pages7
Volume16
Edition8
DOIs
Publication statusPublished - 2008
EventSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting - Honolulu, HI
Duration: 2008 Oct 142008 Oct 16

Other

OtherSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting
CityHonolulu, HI
Period08/10/1408/10/16

Fingerprint

Wafer bonding
Magnetooptical effects
Garnets
Phase shift
Waveguides
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Optical isolator with Si guiding layer fabricated by uv-activated bonding. / Yokoi, Hideki; Sasaki, K.

ECS Transactions. Vol. 16 8. ed. 2008. p. 155-161.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokoi, H & Sasaki, K 2008, Optical isolator with Si guiding layer fabricated by uv-activated bonding. in ECS Transactions. 8 edn, vol. 16, pp. 155-161, Semiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting, Honolulu, HI, 08/10/14. https://doi.org/10.1149/1.2982865
Yokoi, Hideki ; Sasaki, K. / Optical isolator with Si guiding layer fabricated by uv-activated bonding. ECS Transactions. Vol. 16 8. ed. 2008. pp. 155-161
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