Optical isolator with Si guiding layer fabricated by uv-activated bonding

H. Yokoi, K. Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift has been studied. The optical isolator is comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure, which is fabricated by wafer bonding technique. The nonreciprocal phase shift was calculated for magneto-optic waveguides with various layer structures. Wafer bonding between a garnet crystal and Si was also investigated.

Original languageEnglish
Title of host publicationECS Transactions - Semiconductor Wafer Bonding 10
Subtitle of host publicationScience, Technology, and Applications
Pages155-161
Number of pages7
Edition8
DOIs
Publication statusPublished - 2008 Dec 1
EventSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 142008 Oct 16

Publication series

NameECS Transactions
Number8
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSemiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1408/10/16

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Yokoi, H., & Sasaki, K. (2008). Optical isolator with Si guiding layer fabricated by uv-activated bonding. In ECS Transactions - Semiconductor Wafer Bonding 10: Science, Technology, and Applications (8 ed., pp. 155-161). (ECS Transactions; Vol. 16, No. 8). https://doi.org/10.1149/1.2982865