Optical isolator with Si guiding layer fabricated by uv-activated bonding

H. Yokoi; K. Sasaki

doi:10.1149/1.2982865

Optical isolator with Si guiding layer fabricated by uv-activated bonding

H. Yokoi, K. Sasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift has been studied. The optical isolator is comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO₂ structure, which is fabricated by wafer bonding technique. The nonreciprocal phase shift was calculated for magneto-optic waveguides with various layer structures. Wafer bonding between a garnet crystal and Si was also investigated.

Original language	English
Title of host publication	ECS Transactions - Semiconductor Wafer Bonding 10
Subtitle of host publication	Science, Technology, and Applications
Pages	155-161
Number of pages	7
Edition	8
DOIs	https://doi.org/10.1149/1.2982865
Publication status	Published - 2008 Dec 1
Event	Semiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 14 → 2008 Oct 16

Publication series

Name	ECS Transactions
Number	8
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Semiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	08/10/14 → 08/10/16

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2982865

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Yokoi, H & Sasaki, K 2008, Optical isolator with Si guiding layer fabricated by uv-activated bonding. in ECS Transactions - Semiconductor Wafer Bonding 10: Science, Technology, and Applications. 8 edn, ECS Transactions, no. 8, vol. 16, pp. 155-161, Semiconductor Wafer Bonding 10: Science, Technology, and Applications - 214th ECS Meeting, Honolulu, HI, United States, 08/10/14. https://doi.org/10.1149/1.2982865

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abstract = "An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift has been studied. The optical isolator is comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure, which is fabricated by wafer bonding technique. The nonreciprocal phase shift was calculated for magneto-optic waveguides with various layer structures. Wafer bonding between a garnet crystal and Si was also investigated.",

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AB - An interferometric optical isolator, with a Si guiding layer, employing a nonreciprocal phase shift has been studied. The optical isolator is comprised of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure, which is fabricated by wafer bonding technique. The nonreciprocal phase shift was calculated for magneto-optic waveguides with various layer structures. Wafer bonding between a garnet crystal and Si was also investigated.

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