Optical properties of fluorinated silicon oxide films by liquid phase deposition for optical waveguides

Tetsuya Homma; Atsushi Satoh; Seiji Okada; Masahiro Itoh; Masaki Yamaguchi; Hideo Takahashi

doi:10.1109/19.744328

Optical properties of fluorinated silicon oxide films by liquid phase deposition for optical waveguides

Tetsuya Homma, Atsushi Satoh, Seiji Okada, Masahiro Itoh, Masaki Yamaguchi, Hideo Takahashi

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Optical properties of fluorinated silicon oxide (SiOF) films for optical waveguide in optoelectronic devices were investigated. The SiOF films are formed at 25 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (FhSiFe) aqueous solution. Two main absorption peaks corresponding to Si-O and Si-F bonds were observed at the wavenumbers of 1090 and 930 cm^-1 in Fourier transform infrared (FTIR) spectrum, respectively. The LPD-SiOF films show very little content of water components such as Si-OH bonds and OH group. Although the transmittance for 600-nmthick LPD-SiOF film gradually decreased from the wavelength around 700 nm, the relative transmittances to quartz glass are over 98% in the wavelength region from 350-2500 nm. The concentration of fluorine atoms in the LPD-SiOF film was about 5%, and the calculated composition was SiOi.gsFo.is. The calculated refractive index from the polarizability for LPD-SiOF film was 1.430, and agrees very well with the measured value at the wavelength of 632.8 nm by ellipsometry. The dispersion of refractive index was evaluated and fitted to a three-term Sellmeier's dispersion equation. The zero dispersion wavelengths for the LPD-SiOF and thermally grown SiO2 films were 1.271 and 1.339 μm, respectively.

Original language	English
Pages (from-to)	698-702
Number of pages	5
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	47
Issue number	3
DOIs	https://doi.org/10.1109/19.744328
Publication status	Published - 1998

Keywords

Fluorinated silicon oxide (siof)
Heterodyne interference
Laser
Optical waveguide
Refractive index

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/19.744328

Cite this

@article{60538b718b614c578942ba72c59989de,

title = "Optical properties of fluorinated silicon oxide films by liquid phase deposition for optical waveguides",

abstract = "Optical properties of fluorinated silicon oxide (SiOF) films for optical waveguide in optoelectronic devices were investigated. The SiOF films are formed at 25 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (FhSiFe) aqueous solution. Two main absorption peaks corresponding to Si-O and Si-F bonds were observed at the wavenumbers of 1090 and 930 cm-1 in Fourier transform infrared (FTIR) spectrum, respectively. The LPD-SiOF films show very little content of water components such as Si-OH bonds and OH group. Although the transmittance for 600-nmthick LPD-SiOF film gradually decreased from the wavelength around 700 nm, the relative transmittances to quartz glass are over 98% in the wavelength region from 350-2500 nm. The concentration of fluorine atoms in the LPD-SiOF film was about 5%, and the calculated composition was SiOi.gsFo.is. The calculated refractive index from the polarizability for LPD-SiOF film was 1.430, and agrees very well with the measured value at the wavelength of 632.8 nm by ellipsometry. The dispersion of refractive index was evaluated and fitted to a three-term Sellmeier's dispersion equation. The zero dispersion wavelengths for the LPD-SiOF and thermally grown SiO2 films were 1.271 and 1.339 μm, respectively.",

keywords = "Fluorinated silicon oxide (siof), Heterodyne interference, Laser, Optical waveguide, Refractive index",

author = "Tetsuya Homma and Atsushi Satoh and Seiji Okada and Masahiro Itoh and Masaki Yamaguchi and Hideo Takahashi",

note = "Funding Information: Manuscript received August 11, 1998; revised November 30, 1998. This work was supported in part by the project research of Shibaura Institute of Technology (SIT) and by Research Organization for Advanced Engineering, SIT.",

year = "1998",

doi = "10.1109/19.744328",

language = "English",

volume = "47",

pages = "698--702",

journal = "IEEE Transactions on Instrumentation and Measurement",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Optical properties of fluorinated silicon oxide films by liquid phase deposition for optical waveguides

AU - Homma, Tetsuya

AU - Satoh, Atsushi

AU - Okada, Seiji

AU - Itoh, Masahiro

AU - Yamaguchi, Masaki

AU - Takahashi, Hideo

N1 - Funding Information: Manuscript received August 11, 1998; revised November 30, 1998. This work was supported in part by the project research of Shibaura Institute of Technology (SIT) and by Research Organization for Advanced Engineering, SIT.

PY - 1998

Y1 - 1998

N2 - Optical properties of fluorinated silicon oxide (SiOF) films for optical waveguide in optoelectronic devices were investigated. The SiOF films are formed at 25 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (FhSiFe) aqueous solution. Two main absorption peaks corresponding to Si-O and Si-F bonds were observed at the wavenumbers of 1090 and 930 cm-1 in Fourier transform infrared (FTIR) spectrum, respectively. The LPD-SiOF films show very little content of water components such as Si-OH bonds and OH group. Although the transmittance for 600-nmthick LPD-SiOF film gradually decreased from the wavelength around 700 nm, the relative transmittances to quartz glass are over 98% in the wavelength region from 350-2500 nm. The concentration of fluorine atoms in the LPD-SiOF film was about 5%, and the calculated composition was SiOi.gsFo.is. The calculated refractive index from the polarizability for LPD-SiOF film was 1.430, and agrees very well with the measured value at the wavelength of 632.8 nm by ellipsometry. The dispersion of refractive index was evaluated and fitted to a three-term Sellmeier's dispersion equation. The zero dispersion wavelengths for the LPD-SiOF and thermally grown SiO2 films were 1.271 and 1.339 μm, respectively.

AB - Optical properties of fluorinated silicon oxide (SiOF) films for optical waveguide in optoelectronic devices were investigated. The SiOF films are formed at 25 °C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (FhSiFe) aqueous solution. Two main absorption peaks corresponding to Si-O and Si-F bonds were observed at the wavenumbers of 1090 and 930 cm-1 in Fourier transform infrared (FTIR) spectrum, respectively. The LPD-SiOF films show very little content of water components such as Si-OH bonds and OH group. Although the transmittance for 600-nmthick LPD-SiOF film gradually decreased from the wavelength around 700 nm, the relative transmittances to quartz glass are over 98% in the wavelength region from 350-2500 nm. The concentration of fluorine atoms in the LPD-SiOF film was about 5%, and the calculated composition was SiOi.gsFo.is. The calculated refractive index from the polarizability for LPD-SiOF film was 1.430, and agrees very well with the measured value at the wavelength of 632.8 nm by ellipsometry. The dispersion of refractive index was evaluated and fitted to a three-term Sellmeier's dispersion equation. The zero dispersion wavelengths for the LPD-SiOF and thermally grown SiO2 films were 1.271 and 1.339 μm, respectively.

KW - Fluorinated silicon oxide (siof)

KW - Heterodyne interference

KW - Laser

KW - Optical waveguide

KW - Refractive index

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JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

IS - 3

ER -

Optical properties of fluorinated silicon oxide films by liquid phase deposition for optical waveguides

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