Optically induced defects in vitreous silica

S. Juodkazis, M. Watanabe, H. B. Sun, S. Matsuo, J. Nishii, H. Misawa

Research output: Contribution to journalConference article

20 Citations (Scopus)

Abstract

We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

Original languageEnglish
Pages (from-to)696-700
Number of pages5
JournalApplied Surface Science
Volume154
DOIs
Publication statusPublished - 2000 Feb 1
EventThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
Duration: 1999 Jun 11999 Jun 4

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    Juodkazis, S., Watanabe, M., Sun, H. B., Matsuo, S., Nishii, J., & Misawa, H. (2000). Optically induced defects in vitreous silica. Applied Surface Science, 154, 696-700. https://doi.org/10.1016/S0169-4332(99)00430-4