Abstract
The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
| Original language | English |
|---|---|
| Pages (from-to) | 291-296 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 178 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Mar |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot. / Kamada, H.; Takagahara, Toshihide; Ando, H.; Temmyo, J.; Tamamura, T.
In: Physica Status Solidi (A) Applied Research, Vol. 178, No. 1, 03.2000, p. 291-296.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot
AU - Kamada, H.
AU - Takagahara, Toshihide
AU - Ando, H.
AU - Temmyo, J.
AU - Tamamura, T.
PY - 2000/3
Y1 - 2000/3
N2 - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
AB - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
UR - http://www.scopus.com/inward/record.url?scp=0033747525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033747525&partnerID=8YFLogxK
U2 - 10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q
DO - 10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q
M3 - Article
AN - SCOPUS:0033747525
VL - 178
SP - 291
EP - 296
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -