Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada, T. Takagahara, H. Ando, J. Temmyo, T. Tamamura

Research output: Contribution to journalConference article

9 Citations (Scopus)


The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 2000 Mar 1
EventOptics of Excitons in Confined Systems (OECS-6) - Ascona, Switz
Duration: 1999 Aug 301999 Sep 2


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this