Abstract
The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
| Original language | English |
|---|---|
| Pages (from-to) | 291-296 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 178 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Mar 1 |
| Externally published | Yes |
| Event | Optics of Excitons in Confined Systems (OECS-6) - Ascona, Switz Duration: 1999 Aug 30 → 1999 Sep 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Kamada, H., Takagahara, T., Ando, H., Temmyo, J., & Tamamura, T. (2000). Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot. Physica Status Solidi (A) Applied Research, 178(1), 291-296. https://doi.org/10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q