Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada, Toshihide Takagahara, H. Ando, J. Temmyo, T. Tamamura

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

Original languageEnglish
Pages (from-to)291-296
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume178
Issue number1
DOIs
Publication statusPublished - 2000 Mar
Externally publishedYes

Fingerprint

Excitons
Transparency
Semiconductor quantum dots
quantum dots
excitons
excitation
Photoluminescence
Two photon processes
photoluminescence
photons
radiant flux density
Photons
Spectroscopy
interference
LDS 751
profiles
spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot. / Kamada, H.; Takagahara, Toshihide; Ando, H.; Temmyo, J.; Tamamura, T.

In: Physica Status Solidi (A) Applied Research, Vol. 178, No. 1, 03.2000, p. 291-296.

Research output: Contribution to journalArticle

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