Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada; T. Takagahara; H. Ando; J. Temmyo; T. Tamamura

doi:10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada, T. Takagahara, H. Ando, J. Temmyo, T. Tamamura

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm². A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

Original language	English
Pages (from-to)	291-296
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	178
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q
Publication status	Published - 2000 Mar 1
Externally published	Yes
Event	Optics of Excitons in Confined Systems (OECS-6) - Ascona, Switz Duration: 1999 Aug 30 → 1999 Sep 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

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Cite this

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title = "Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot",

abstract = "The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.",

author = "H. Kamada and T. Takagahara and H. Ando and J. Temmyo and T. Tamamura",

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T1 - Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

AU - Kamada, H.

AU - Takagahara, T.

AU - Ando, H.

AU - Temmyo, J.

AU - Tamamura, T.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

AB - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

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M3 - Conference article

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EP - 296

JO - Physica Status Solidi (A) Applied Research

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