Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada; T. Takagahara; H. Ando; J. Temmyo; T. Tamamura

doi:10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

H. Kamada, T. Takagahara, H. Ando, J. Temmyo, T. Tamamura

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm². A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

Original language	English
Pages (from-to)	291-296
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	178
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q
Publication status	Published - 2000 Mar 1
Externally published	Yes
Event	Optics of Excitons in Confined Systems (OECS-6) - Ascona, Switz Duration: 1999 Aug 30 → 1999 Sep 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

Cite this

@article{fa682edae489478cbf13af568c7399c9,

title = "Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot",

abstract = "The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.",

author = "H. Kamada and T. Takagahara and H. Ando and J. Temmyo and T. Tamamura",

year = "2000",

month = mar,

day = "1",

doi = "10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q",

language = "English",

volume = "178",

pages = "291--296",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "Optics of Excitons in Confined Systems (OECS-6) ; Conference date: 30-08-1999 Through 02-09-1999",

}

TY - JOUR

T1 - Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

AU - Kamada, H.

AU - Takagahara, T.

AU - Ando, H.

AU - Temmyo, J.

AU - Tamamura, T.

PY - 2000/3/1

Y1 - 2000/3/1

N2 - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

AB - The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.

UR - http://www.scopus.com/inward/record.url?scp=0033747525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033747525&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

DO - 10.1002/1521-396X(200003)178:1<291::AID-PSSA291>3.0.CO;2-Q

M3 - Conference article

AN - SCOPUS:0033747525

VL - 178

SP - 291

EP - 296

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

T2 - Optics of Excitons in Confined Systems (OECS-6)

Y2 - 30 August 1999 through 2 September 1999

ER -

Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot

Abstract

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