Optimization of the fabrication process for high trapped field MgB 2 bulks

M. Muralidhar; A. Ishihara; K. Suzuki; Y. Fukumoto; Y. Yamamoto; M. Tomita

doi:10.1016/j.physc.2013.04.012

Optimization of the fabrication process for high trapped field MgB ₂ bulks

M. Muralidhar, A. Ishihara, K. Suzuki, Y. Fukumoto, Y. Yamamoto, M. Tomita

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The optimization of the sintering conditions of disk shaped bulk MgB ₂ superconductors with respect to the trapped field is described. Series of samples were prepared by varying the sintering temperatures between 700 and 950 C. The temperature range was divided into three regions, namely the low (<750 C), medium (<825 C), and high (>850 C) temperature region. Scanning electron microscopy and X-ray diffraction indicated that homogenous single phase MgB₂ bulks were produced in the medium sintering temperature range. At this processing temperature range the highest trapped field was also achieved. Samples of 20 mm in diameter and 7 mm thick produced at 775 C exhibited trapped field of 1.50 T at 20 K.

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	494
DOIs	https://doi.org/10.1016/j.physc.2013.04.012
Publication status	Published - 2013
Externally published	Yes

Keywords

MgB
Microstructure analysis
Trapped field
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/j.physc.2013.04.012

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title = "Optimization of the fabrication process for high trapped field MgB 2 bulks",

abstract = "The optimization of the sintering conditions of disk shaped bulk MgB 2 superconductors with respect to the trapped field is described. Series of samples were prepared by varying the sintering temperatures between 700 and 950 C. The temperature range was divided into three regions, namely the low (<750 C), medium (<825 C), and high (>850 C) temperature region. Scanning electron microscopy and X-ray diffraction indicated that homogenous single phase MgB2 bulks were produced in the medium sintering temperature range. At this processing temperature range the highest trapped field was also achieved. Samples of 20 mm in diameter and 7 mm thick produced at 775 C exhibited trapped field of 1.50 T at 20 K.",

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T1 - Optimization of the fabrication process for high trapped field MgB 2 bulks

AU - Muralidhar, M.

AU - Ishihara, A.

AU - Suzuki, K.

AU - Fukumoto, Y.

AU - Yamamoto, Y.

AU - Tomita, M.

PY - 2013

Y1 - 2013

N2 - The optimization of the sintering conditions of disk shaped bulk MgB 2 superconductors with respect to the trapped field is described. Series of samples were prepared by varying the sintering temperatures between 700 and 950 C. The temperature range was divided into three regions, namely the low (<750 C), medium (<825 C), and high (>850 C) temperature region. Scanning electron microscopy and X-ray diffraction indicated that homogenous single phase MgB2 bulks were produced in the medium sintering temperature range. At this processing temperature range the highest trapped field was also achieved. Samples of 20 mm in diameter and 7 mm thick produced at 775 C exhibited trapped field of 1.50 T at 20 K.

AB - The optimization of the sintering conditions of disk shaped bulk MgB 2 superconductors with respect to the trapped field is described. Series of samples were prepared by varying the sintering temperatures between 700 and 950 C. The temperature range was divided into three regions, namely the low (<750 C), medium (<825 C), and high (>850 C) temperature region. Scanning electron microscopy and X-ray diffraction indicated that homogenous single phase MgB2 bulks were produced in the medium sintering temperature range. At this processing temperature range the highest trapped field was also achieved. Samples of 20 mm in diameter and 7 mm thick produced at 775 C exhibited trapped field of 1.50 T at 20 K.

KW - MgB

KW - Microstructure analysis

KW - Trapped field

KW - X-ray diffraction

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