Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

H. Ishikawa, T. Egawa, T. Jimbo

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)TuP-8
JournalDefault journal
Publication statusPublished - 2001 Oct 1

Cite this

Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique. / Ishikawa, H.; Egawa, T.; Jimbo, T.

In: Default journal, 01.10.2001, p. TuP-8.

Research output: Contribution to journalArticle

@article{8555dc734fe142bdbda7977b1d2b05fc,
title = "Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique",
author = "H. Ishikawa and T. Egawa and T. Jimbo",
year = "2001",
month = "10",
day = "1",
language = "English",
pages = "TuP--8",
journal = "Default journal",

}

TY - JOUR

T1 - Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

PY - 2001/10/1

Y1 - 2001/10/1

M3 - Article

SP - TuP-8

JO - Default journal

JF - Default journal

ER -