Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing

K. Kyuno

Research output: Contribution to journal › Article

Original languageEnglish
JournalInternational Conference on Microelectronics and Interfaces(ICMI '06)
Publication statusPublished - 2005 Mar 1

Cite this

Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing. / Kyuno, K.

In: International Conference on Microelectronics and Interfaces(ICMI '06), 01.03.2005.

Research output: Contribution to journal › Article

Kyuno, K 2005, 'Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing', International Conference on Microelectronics and Interfaces(ICMI '06).
Kyuno K. Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing. International Conference on Microelectronics and Interfaces(ICMI '06). 2005 Mar 1.
Kyuno, K. / Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing. In: International Conference on Microelectronics and Interfaces(ICMI '06). 2005.
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