Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing

Research output: Contribution to journalArticle

Original languageEnglish
JournalInternational Conference on Microelectronics and Interfaces(ICMI '06)
Publication statusPublished - 2005 Mar 1

Cite this

@article{b4d41d9e86394ea39966da5a6eccfa79,
title = "Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing",
author = "K. Kyuno",
year = "2005",
month = "3",
day = "1",
language = "English",
journal = "International Conference on Microelectronics and Interfaces(ICMI '06)",

}

TY - JOUR

T1 - Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing

AU - Kyuno, K.

PY - 2005/3/1

Y1 - 2005/3/1

M3 - Article

JO - International Conference on Microelectronics and Interfaces(ICMI '06)

JF - International Conference on Microelectronics and Interfaces(ICMI '06)

ER -