Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics

K. Kita, M. Sasagawa, K. Tomida, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)292-293
JournalExtended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2003 Sep 1

Cite this

Oxidation-Induced Damages on Germanium MIS Capacitors with HfO2 Gate Dielectrics. / Kita, K.; Sasagawa, M.; Tomida, K.; Kyuno, K.; Toriumi, A.

In: Extended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM), 01.09.2003, p. 292-293.

Research output: Contribution to journalArticle

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