TY - JOUR
T1 - Oxygen plasma etching of diamond-like carbon coated mold-die for micro-texturing
AU - Aizawa, Tatsuhiko
AU - Fukuda, Tatsuya
N1 - Funding Information:
Authors would like to express their gratitude to Mr. N.T. Redationo and Mr. E.E. Yunata (University of Brawijaya, Indonesia) for their help in experiments during their stay at the Shibaura Institute of Technology. This study is financially supported in part by the Grant-in-Aid from MEXT with the contract number of #22560089, by the JST-project with the contract number of #AS2321160F, and, by the Mold-Die Technology Promotion Foundation with the contract number of #579.
PY - 2013/1/25
Y1 - 2013/1/25
N2 - Diamond-like carbon (DLC) coating via PVD/CVD on the SKD11 substrate was employed to make micro-texturing by using high density oxygen plasma etching. Original pattern by metal chromium was first line-drawn on the surface of DLC coating; then, it was subjected to oxygen plasma etching. Even without any hazardous etchants such as CF4, high etching rate was attained only by using oxygen gas; i.e. 5μm/H. Plasma diagnosis by spectroscopy proved that this etching process should be controlled by activated oxygen atom flux of {O, O*}. Direct chemical reaction by C (in DLC)+O→CO, or, C (in DLC)+O*→CO, drove this etching process. Detection of CO peaks in the wave length range from 200 to 300nm also proved that this oxygen plasma etching should be advanced by chemical reactions. This etching behavior was insensitive to line width (WG) and pitch width (PG) for 2μm<WG<100μm and 5μm<PG<100μm. Scanning electron microscope and laser-profilometer were also used to make precise measurement on the etched profiles.
AB - Diamond-like carbon (DLC) coating via PVD/CVD on the SKD11 substrate was employed to make micro-texturing by using high density oxygen plasma etching. Original pattern by metal chromium was first line-drawn on the surface of DLC coating; then, it was subjected to oxygen plasma etching. Even without any hazardous etchants such as CF4, high etching rate was attained only by using oxygen gas; i.e. 5μm/H. Plasma diagnosis by spectroscopy proved that this etching process should be controlled by activated oxygen atom flux of {O, O*}. Direct chemical reaction by C (in DLC)+O→CO, or, C (in DLC)+O*→CO, drove this etching process. Detection of CO peaks in the wave length range from 200 to 300nm also proved that this oxygen plasma etching should be advanced by chemical reactions. This etching behavior was insensitive to line width (WG) and pitch width (PG) for 2μm<WG<100μm and 5μm<PG<100μm. Scanning electron microscope and laser-profilometer were also used to make precise measurement on the etched profiles.
KW - DLC
KW - Masking
KW - Micro-grooving
KW - Oxygen plasma etching
KW - Plasma diagnosis
KW - RF-DC plasmas
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U2 - 10.1016/j.surfcoat.2012.07.095
DO - 10.1016/j.surfcoat.2012.07.095
M3 - Article
AN - SCOPUS:84872682579
VL - 215
SP - 364
EP - 368
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
ER -